savantic semiconductor product specification silicon pnp power transistors 2sb940,2SB940A d escription with to-220fa package complement to type 2sd1264/1264a high collector to emitter voltage v c eo large collector power dissipation p c applications for power amplification for tv vertical deflection output pinning pin description 1 emitter 2 collector 3 base absolute maximum ratings(ta=25 ) symbol parameter conditions value unit 2sb940 -200 v cbo collector-base voltage 2SB940A open emitter -200 v 2sb940 -150 v ceo collector-emitter voltage 2SB940A open base -180 v v ebo emitter-base voltage open collector -6 v i c collector current -2 a i cm collector current-peak -3 a t a =25 2 p c collector power dissipation t c =25 30 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon pnp power transistors 2sb940,2SB940A characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit 2sb940 -150 v (br)ceo collector-emitter breakdown voltage 2SB940A i c =-5ma ,i b =0 -180 v v (br)cbo collector-base breakdown voltage i c =-50a ,i e =0 -200 v v (br)ebo emitter-base breakdown voltage i c =-500a ,i c =0 -6 v v cesat collector-emitter saturation voltage i c =-0.5a, i b =-50ma -1.0 v v be base-emitter voltage i c =-0.4a ; v ce =-10v -1.0 v i ebo emitter cut-off current v eb =-4v; i c =0 -50 a i cbo collector cut-off current v cb =-200v; i e =0 -50 a h fe-1 dc current gain i c =-0.15a ; v ce =-10v 60 240 h fe-2 dc current gain i c =-0.4a ; v ce =-10v 50 f t transition frequency i c =-0.5a; v ce =-10v,f=10mhz 30 mhz h fe-1 classifications q p 60-140 100-240
savantic semiconductor product specification 3 silicon pnp power transistors 2sb940,2SB940A package outline fig.2 outline dimensions (unindicated tolerance: 0.15 mm)
savantic semiconductor product specification 4 silicon pnp power transistors 2sb940,2SB940A
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